n-Channel Power MOSFET
OptiMOS™
BSB280N15NZ3 G
Data Sheet
2.5, 2011-09-16
Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
1
Description
OptiMOS™150V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™
150V the best choice for the demanding requirements of voltage regulator
solutions in Solar, Drives, Datacom and Telecom applications. Super fast
switching Control FETs together with low EMI Sync FETs provide solutions that
are easy to design in. OptiMOS™ products are available in high performance
packages to tackle your most challenging applications giving full flexibility in
optimizing space- efficiency and cost.
Features
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Optimized for high switching frequency DC/DC converter
Very low on-resistance RDS(on)
Qualified according to JEDEC1) for target applications
Excellent gate charge x RDS(on) product (FOM)
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Double sided cooling
Compatible with DirectFET® package MZ footprint and outline
Low parasitic inductance
Low profile (2|ID|RDS(on)max,
ID=30 A
Dynamic characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Input capacitance
Ciss
-
1200
1600
Output capacitance
Coss
-
180
240
Reverse transfer capacitance
Crss
-
4
-
Turn-on delay time
td(on)
-
9
-
Rise time
tr
-
6
-
Turn-off delay time
td(off)
-
16
-
Fall time
tf
-
3
-
Final Data Sheet
3
Unit
Note /
Test Condition
pF
VGS=0 V, VDS=75V,
f=1 MHz
ns
VDD=75V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Electrical characteristics
Table 6
Gate charge characteristics1)
Parameter
Symbol
Values
Min.
Typ.
Max.
Gate to source charge
Qgs
-
7
-
Gate to drain charge
Qgd
-
2.6
-
Switching charge
Qsw
-
7
-
Gate charge total
Qg
-
15
21
Gate plateau voltage
Vplateau
-
5.6
-
Output charge
Qoss
41
55
Unit
Note /
Test Condition
nC
VDD=75 V,
ID=30 A,
VGS=0 to 10 V
V
VDD=75 V, VGS=0 V
1) See figure 16 for gate charge parameter definition
Table 7
Reverse diode characteristics
Parameter
Symbol
Values
Min.
Typ.
Unit
Note /
Test Condition
A
TC=25 °C
Max.
Diode continuous forward current
Is
47
Diode pulse current
IS,pulse
120
Diode forward voltage
VSD
-
0.9
1.2
V
VGS=0 V, IF=47 A,
Tj=25 °C
Reverse recovery time
trr
-
100
-
nC
Reverse recovery charge
Qrr
VR=75 V, IF=30A,
diF/dt=100 A/µs
Final Data Sheet
314
4
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 8
1 Power dissipation
2 Drain current
Ptot = f(TC)
ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C
ID=f(VDS); Tj=25 °C; D=0; parameter: Tp
Final Data Sheet
4 Max. transient thermal impedance
Z(thJC)=f(tp); parameter: D=tp/T
5
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Electrical characteristics diagrams
Table 10
5 Typ. output characteristics TC=25 °C
6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS
RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
gfs=f(ID); Tj=25 °C
Final Data Sheet
6
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Electrical characteristics diagrams
Table 12
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V
VGS(th)=f(Tj); VGS=VDS; ID=250 µA
Table 13
11 Typ. capacitances
12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz
IF=f(VSD); parameter: Tj
Final Data Sheet
7
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Electrical characteristics diagrams
Table 14
13 Avalanche characteristics
14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Drain-source breakdown voltage
16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
Final Data Sheet
8
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Package outlines
6
Package outlines
Figure 1
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
9
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Package outlines
7
Package outlines
Figure 2
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
10
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Package outlines
8
Package outlines
Figure 3
Outlines MG-WDSON-2, dimensions in mm/inches
9
Marking layout
Final Data Sheet
11
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Revision History
9
Revision History
Revision History: 2011-09-16, 2.5
Previous Revision:
Revision
Subjects (major changes since last revision)
0.1
Release of target data sheet
2.2
Release Final version
2.3
Formating
2.4
DirectFET Disclaimer expired
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Edition 2011-09-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
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Final Data Sheet
12
2.5, 2011-09-16
